switching diode features y low forward voltage y fast reverse recovery time maximum ratings @t a =25 parameter symbol limit unit non-repetitive peak r everse v oltage v rm 85 v dc blocking voltage v r 80 v forward continuous current i fm 300 ma average rectified output current i o 100 ma power dissipation p d 150 mw junction t emperature t j 1 50 storage t emperature r ange t stg -55 ~+ 1 50 electrical characteristics @t a =25 parameter symbol min typ max unit conditions reverse b reakdown v oltage v (br ) 80 v i r =100 a v f1 0.60 v i f =1ma v f2 0.72 v i f =10ma forward voltage v f3 0.9 1.2 v i f =100ma i r1 0.1 ua v r =30v reverse current i r2 0.5 ua v r =80v capacitance between terminals c t 0.9 3.0 pf v r =0,f=1mhz reverse recovery time t r r 1.6 4.0 ns i f =i r =10ma,i rr =0.1i r sot-23 1 2 3 smd type diodes marking marking b3 1SS184 a,jun,2011
0 25 50 75 100 125 150 0 50 100 150 200 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.01 0.1 1 10 100 020406080 1 10 100 1000 0 5 10 15 20 0.8 0.9 1.0 1.1 1.2 forward characteristics reverse characteristics power derating curve power dissipation p d (mw) ambient temperature ta ( ) 30 0.03 0.3 3 300 typical characteristics t a = 1 0 0 t a = 2 5 forward current i f (ma) forward voltage v f (v) ta=100 ta=25 reverse current i r (na) reverse voltage v r (v) 30 3 ta=25 f=1mhz capacitance characteristics reverse voltage v r (v) capacitance between terminals c t (pf) smd type diodes a,jun,2011
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